|
制造商编码
|
(G)3DG101E
|
|
制造商
|
沈阳飞达电子有限公司
|
|
类别
|
半导体分立器件
|
|
子类别
|
NPN晶体管
|
|
元器件描述
|
3DG101型NPN硅外延平面高频小功率晶体管
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|
封装类型
|
A3-01B
|
|
原理图名称
|
DISCRETE_004||TRANSISTOR_NPN_ECB
|
|
元器件封装名称
|
dio_3dg101b
|
|
元器件手册
|
沈阳飞达.pdf
|
|
RoHS状态
|
NA
|
|
ESD等级
|
NA
|
|
工作温度
|
NA
|
N-Channel Enhancement Mode Field Effect Transistor(N沟道增强型场效应晶体管) N-Channel Logic Level Enhancement Mode Field Effect Transistor(N沟道增强型场效应晶体管) N channel power MOSFET(N沟道MOS型场效应晶体管) N channel power MOSFET(N沟道MOS型场效应晶体管) [
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{
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"name": "48",
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"image": false
},
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"displayName": "Fairchild Semiconductor",
"image": false
},
"category": {
"name": "switching-diode",
"displayName": "开关二极管",
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"name": "diode",
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},
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"displayName": "IRF",
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]
