Infineon Technologies AG
BB857
Silicon Tuning Diode
CAD 模型
符号
封装
器件属性
制造商编码 BB857
制造商 Infineon
类别 半导体分立器件
子类别 变容二极管
元器件描述 Silicon Tuning Diode
封装类型 SCD80
原理图名称 DISCRETE_007||BB857
元器件封装名称 dio_scd80_2q0130x0080x0080mm
元器件手册 BB837_BB857.pdf
RoHS状态 NA
ESD等级 NA
工作温度 #55-150
数据手册
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IRF3706S

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[ { "id": "1858", "name": "2N7002", "description": "N-Channel Enhancement Mode Field Effect Transistor(N沟道增强型场效应晶体管)", "military": false, "manufacturer": { "name": "48", "displayName": "Fairchild Semiconductor", "image": false }, "category": { "name": "mosfet", "displayName": "MOS型场效应晶体管", "parent": { "name": "fet", "displayName": "场效应晶体管", "parent": { "name": "discrete-semiconductor-device", "displayName": "半导体分立器件", "parent": null } } }, "image": true, "datasheet": true, "symbol": true, "footprint": true, "threed": true }, { "id": "4670", "name": "FDB7030L", "description": "N-Channel Logic Level Enhancement Mode Field Effect Transistor(N沟道增强型场效应晶体管)", "military": false, "manufacturer": { "name": "48", "displayName": "Fairchild Semiconductor", "image": false }, "category": { "name": "mosfet", "displayName": "MOS型场效应晶体管", "parent": { "name": "fet", "displayName": "场效应晶体管", "parent": { "name": "discrete-semiconductor-device", "displayName": "半导体分立器件", "parent": null } } }, "image": true, "datasheet": true, "symbol": true, "footprint": true, "threed": true }, { "id": "4671", "name": "FDLL4148", "description": "Small Signal Diode(二极管)", "military": false, "manufacturer": { "name": "48", "displayName": "Fairchild Semiconductor", "image": false }, "category": { "name": "switching-diode", "displayName": "开关二极管", "parent": { "name": "diode", "displayName": "普通二极管", "parent": { "name": "discrete-semiconductor-device", "displayName": "半导体分立器件", "parent": null } } }, "image": true, "datasheet": true, "symbol": true, "footprint": true, "threed": true }, { "id": "4706", "name": "IRF3706S", "description": "N channel power MOSFET(N沟道MOS型场效应晶体管)", "military": false, "manufacturer": { "name": "IRF", "displayName": "IRF", "image": false }, "category": { "name": "mosfet", "displayName": "MOS型场效应晶体管", "parent": { "name": "fet", "displayName": "场效应晶体管", "parent": { "name": "discrete-semiconductor-device", "displayName": "半导体分立器件", "parent": null } } }, "image": true, "datasheet": true, "symbol": true, "footprint": true, "threed": true }, { "id": "4707", "name": "IRL2703S", "description": "N channel power MOSFET(N沟道MOS型场效应晶体管)", "military": false, "manufacturer": { "name": "IRF", "displayName": "IRF", "image": false }, "category": { "name": "mosfet", "displayName": "MOS型场效应晶体管", "parent": { "name": "fet", "displayName": "场效应晶体管", "parent": { "name": "discrete-semiconductor-device", "displayName": "半导体分立器件", "parent": null } } }, "image": true, "datasheet": true, "symbol": true, "footprint": true, "threed": true } ]
[ { "name": "discrete-semiconductor-device", "displayName": "半导体分立器件", "parent": null }, { "name": "diode", "displayName": "普通二极管", "parent": { "name": "discrete-semiconductor-device", "displayName": "半导体分立器件", "parent": null } }, { "name": "varactor-diode", "displayName": "变容二极管", "parent": { "name": "diode", "displayName": "普通二极管", "parent": { "name": "discrete-semiconductor-device", "displayName": "半导体分立器件", "parent": null } } } ]
[ { "id": "1858", "name": "2N7002", "description": "N-Channel Enhancement Mode Field Effect Transistor(N沟道增强型场效应晶体管)", "military": false, "manufacturer": { "name": "48", "displayName": "Fairchild Semiconductor", "image": false }, "category": { "name": "mosfet", "displayName": "MOS型场效应晶体管", "parent": { "name": "fet", "displayName": "场效应晶体管", "parent": { "name": "discrete-semiconductor-device", "displayName": "半导体分立器件", "parent": null } } }, "image": true, "datasheet": true, "symbol": true, "footprint": true, "threed": true }, { "id": "4670", "name": "FDB7030L", "description": "N-Channel Logic Level Enhancement Mode Field Effect Transistor(N沟道增强型场效应晶体管)", "military": false, "manufacturer": { "name": "48", "displayName": "Fairchild Semiconductor", "image": false }, "category": { "name": "mosfet", "displayName": "MOS型场效应晶体管", "parent": { "name": "fet", "displayName": "场效应晶体管", "parent": { "name": "discrete-semiconductor-device", "displayName": "半导体分立器件", "parent": null } } }, "image": true, "datasheet": true, "symbol": true, "footprint": true, "threed": true }, { "id": "4671", "name": "FDLL4148", "description": "Small Signal Diode(二极管)", "military": false, "manufacturer": { "name": "48", "displayName": "Fairchild Semiconductor", "image": false }, "category": { "name": "switching-diode", "displayName": "开关二极管", "parent": { "name": "diode", "displayName": "普通二极管", "parent": { "name": "discrete-semiconductor-device", "displayName": "半导体分立器件", "parent": null } } }, "image": true, "datasheet": true, "symbol": true, "footprint": true, "threed": true }, { "id": "4706", "name": "IRF3706S", "description": "N channel power MOSFET(N沟道MOS型场效应晶体管)", "military": false, "manufacturer": { "name": "IRF", "displayName": "IRF", "image": false }, "category": { "name": "mosfet", "displayName": "MOS型场效应晶体管", "parent": { "name": "fet", "displayName": "场效应晶体管", "parent": { "name": "discrete-semiconductor-device", "displayName": "半导体分立器件", "parent": null } } }, "image": true, "datasheet": true, "symbol": true, "footprint": true, "threed": true }, { "id": "4707", "name": "IRL2703S", "description": "N channel power MOSFET(N沟道MOS型场效应晶体管)", "military": false, "manufacturer": { "name": "IRF", "displayName": "IRF", "image": false }, "category": { "name": "mosfet", "displayName": "MOS型场效应晶体管", "parent": { "name": "fet", "displayName": "场效应晶体管", "parent": { "name": "discrete-semiconductor-device", "displayName": "半导体分立器件", "parent": null } } }, "image": true, "datasheet": true, "symbol": true, "footprint": true, "threed": true } ]

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