三星电子
K4B2G0846C-HCH9
256 MEG x 8 DDR3 SDRAM
CAD 模型
符号
封装
器件属性
制造商编码 K4B2G0846C-HCH9
制造商 SAMSUNG
类别 存储器电路
子类别 DDR
元器件描述 256 MEG x 8 DDR3 SDRAM
封装类型 FBGA78
原理图名称 MEMORY_015||K4B2G0846C_FBGA78
元器件封装名称 fbga78q9x13x0120p0080mm
元器件手册 K4B2G0846C_rev131.pdf
RoHS状态 RoHS
ESD等级 NA
工作温度 0-95
数据手册
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