|
制造商编码
|
MW6S010GNR1
|
|
制造商
|
Freescale
|
|
类别
|
半导体分立器件
|
|
子类别
|
MOS型场效应晶体管
|
|
元器件描述
|
RF Power Field Effect Transistors,N-Channel Enhancement-Mode Lateral MOSFETs
|
|
封装类型
|
TO-270-3
|
|
原理图名称
|
DISCRETE_006||IGFET_E_S_N_CS_DGS_F
|
|
元器件封装名称
|
tr_to270_3q380x240x88
|
|
元器件手册
|
140008028.pdf
|
|
RoHS状态
|
RoHS
|
|
ESD等级
|
HBM:Class 1A;CDM:Class A;MM:Class III
|
|
工作温度
|
TBD
|
N-Channel Enhancement Mode Field Effect Transistor(N沟道增强型场效应晶体管) N-Channel Logic Level Enhancement Mode Field Effect Transistor(N沟道增强型场效应晶体管) N channel power MOSFET(N沟道MOS型场效应晶体管) N channel power MOSFET(N沟道MOS型场效应晶体管) [
{
"id": "1858",
"name": "2N7002",
"description": "N-Channel Enhancement Mode Field Effect Transistor(N沟道增强型场效应晶体管)",
"military": false,
"manufacturer": {
"name": "48",
"displayName": "Fairchild Semiconductor",
"image": false
},
"category": {
"name": "mosfet",
"displayName": "MOS型场效应晶体管",
"parent": {
"name": "fet",
"displayName": "场效应晶体管",
"parent": {
"name": "discrete-semiconductor-device",
"displayName": "半导体分立器件",
"parent": null
}
}
},
"image": true,
"datasheet": true,
"symbol": true,
"footprint": true,
"threed": true
},
{
"id": "4670",
"name": "FDB7030L",
"description": "N-Channel Logic Level Enhancement Mode Field Effect Transistor(N沟道增强型场效应晶体管)",
"military": false,
"manufacturer": {
"name": "48",
"displayName": "Fairchild Semiconductor",
"image": false
},
"category": {
"name": "mosfet",
"displayName": "MOS型场效应晶体管",
"parent": {
"name": "fet",
"displayName": "场效应晶体管",
"parent": {
"name": "discrete-semiconductor-device",
"displayName": "半导体分立器件",
"parent": null
}
}
},
"image": true,
"datasheet": true,
"symbol": true,
"footprint": true,
"threed": true
},
{
"id": "4671",
"name": "FDLL4148",
"description": "Small Signal Diode(二极管)",
"military": false,
"manufacturer": {
"name": "48",
"displayName": "Fairchild Semiconductor",
"image": false
},
"category": {
"name": "switching-diode",
"displayName": "开关二极管",
"parent": {
"name": "diode",
"displayName": "普通二极管",
"parent": {
"name": "discrete-semiconductor-device",
"displayName": "半导体分立器件",
"parent": null
}
}
},
"image": true,
"datasheet": true,
"symbol": true,
"footprint": true,
"threed": true
},
{
"id": "4706",
"name": "IRF3706S",
"description": "N channel power MOSFET(N沟道MOS型场效应晶体管)",
"military": false,
"manufacturer": {
"name": "IRF",
"displayName": "IRF",
"image": false
},
"category": {
"name": "mosfet",
"displayName": "MOS型场效应晶体管",
"parent": {
"name": "fet",
"displayName": "场效应晶体管",
"parent": {
"name": "discrete-semiconductor-device",
"displayName": "半导体分立器件",
"parent": null
}
}
},
"image": true,
"datasheet": true,
"symbol": true,
"footprint": true,
"threed": true
},
{
"id": "4707",
"name": "IRL2703S",
"description": "N channel power MOSFET(N沟道MOS型场效应晶体管)",
"military": false,
"manufacturer": {
"name": "IRF",
"displayName": "IRF",
"image": false
},
"category": {
"name": "mosfet",
"displayName": "MOS型场效应晶体管",
"parent": {
"name": "fet",
"displayName": "场效应晶体管",
"parent": {
"name": "discrete-semiconductor-device",
"displayName": "半导体分立器件",
"parent": null
}
}
},
"image": true,
"datasheet": true,
"symbol": true,
"footprint": true,
"threed": true
}
]
[
{
"name": "discrete-semiconductor-device",
"displayName": "半导体分立器件",
"parent": null
},
{
"name": "fet",
"displayName": "场效应晶体管",
"parent": {
"name": "discrete-semiconductor-device",
"displayName": "半导体分立器件",
"parent": null
}
},
{
"name": "mosfet",
"displayName": "MOS型场效应晶体管",
"parent": {
"name": "fet",
"displayName": "场效应晶体管",
"parent": {
"name": "discrete-semiconductor-device",
"displayName": "半导体分立器件",
"parent": null
}
}
}
]
[
{
"id": "1858",
"name": "2N7002",
"description": "N-Channel Enhancement Mode Field Effect Transistor(N沟道增强型场效应晶体管)",
"military": false,
"manufacturer": {
"name": "48",
"displayName": "Fairchild Semiconductor",
"image": false
},
"category": {
"name": "mosfet",
"displayName": "MOS型场效应晶体管",
"parent": {
"name": "fet",
"displayName": "场效应晶体管",
"parent": {
"name": "discrete-semiconductor-device",
"displayName": "半导体分立器件",
"parent": null
}
}
},
"image": true,
"datasheet": true,
"symbol": true,
"footprint": true,
"threed": true
},
{
"id": "4670",
"name": "FDB7030L",
"description": "N-Channel Logic Level Enhancement Mode Field Effect Transistor(N沟道增强型场效应晶体管)",
"military": false,
"manufacturer": {
"name": "48",
"displayName": "Fairchild Semiconductor",
"image": false
},
"category": {
"name": "mosfet",
"displayName": "MOS型场效应晶体管",
"parent": {
"name": "fet",
"displayName": "场效应晶体管",
"parent": {
"name": "discrete-semiconductor-device",
"displayName": "半导体分立器件",
"parent": null
}
}
},
"image": true,
"datasheet": true,
"symbol": true,
"footprint": true,
"threed": true
},
{
"id": "4671",
"name": "FDLL4148",
"description": "Small Signal Diode(二极管)",
"military": false,
"manufacturer": {
"name": "48",
"displayName": "Fairchild Semiconductor",
"image": false
},
"category": {
"name": "switching-diode",
"displayName": "开关二极管",
"parent": {
"name": "diode",
"displayName": "普通二极管",
"parent": {
"name": "discrete-semiconductor-device",
"displayName": "半导体分立器件",
"parent": null
}
}
},
"image": true,
"datasheet": true,
"symbol": true,
"footprint": true,
"threed": true
},
{
"id": "4706",
"name": "IRF3706S",
"description": "N channel power MOSFET(N沟道MOS型场效应晶体管)",
"military": false,
"manufacturer": {
"name": "IRF",
"displayName": "IRF",
"image": false
},
"category": {
"name": "mosfet",
"displayName": "MOS型场效应晶体管",
"parent": {
"name": "fet",
"displayName": "场效应晶体管",
"parent": {
"name": "discrete-semiconductor-device",
"displayName": "半导体分立器件",
"parent": null
}
}
},
"image": true,
"datasheet": true,
"symbol": true,
"footprint": true,
"threed": true
},
{
"id": "4707",
"name": "IRL2703S",
"description": "N channel power MOSFET(N沟道MOS型场效应晶体管)",
"military": false,
"manufacturer": {
"name": "IRF",
"displayName": "IRF",
"image": false
},
"category": {
"name": "mosfet",
"displayName": "MOS型场效应晶体管",
"parent": {
"name": "fet",
"displayName": "场效应晶体管",
"parent": {
"name": "discrete-semiconductor-device",
"displayName": "半导体分立器件",
"parent": null
}
}
},
"image": true,
"datasheet": true,
"symbol": true,
"footprint": true,
"threed": true
}
]
