CJAC13TH06
CJ(江苏长电/长晶)
CJAC13TH06采用屏蔽栅沟槽技术和设计,以低栅极电荷提供优异的RDS,它可以用于各种各样的应用。
JMSL0620AUE
JJW(捷捷微)
低导通电阻
IRL2703S
IRF
N channel power MOSFET(N沟道MOS型场效应晶体管)
IRF3706S
IRF
N channel power MOSFET(N沟道MOS型场效应晶体管)
FDB7030L
Fairchild Semiconductor
N-Channel Logic Level Enhancement Mode Field Effect Transistor(N沟道增强型场效应晶体管)
2N7002
Fairchild Semiconductor
N-Channel Enhancement Mode Field Effect Transistor(N沟道增强型场效应晶体管)
MW6S010GNR1
Freescale Semiconductor
RF Power Field Effect Transistors,N-Channel Enhancement-Mode Lateral MOSFETs
2N5246
ON
N-Channel RF Amplifier
JANTX2N6849
IR
P-Channel power MOSFET